Mini DIP (SPM3) Application Note (2012-07-09)
Contents
1.
Introduction ............................................................................................ 4
1.1 Introduction.......................................................................................................................................... 4
1.2 Mini DIP SPM Design Concept ............................................................................................................ 4
1.3 Mini DIP SPM Technology ................................................................................................................... 5
1.4 Advantage of Mini DIP SPM-driven inverter drives ........................................................................... 7
1.5 Summary .............................................................................................................................................. 9
2.
Mini DIP SPM Product Outline ............................................................ 10
2.1 Ordering Information ......................................................................................................................... 10
2.2 Product Line-Up ................................................................................................................................. 10
2.3 Applications ....................................................................................................................................... 10
2.4 Package Structure .............................................................................................................................. 11
3.
Outline and Pin Description ................................................................ 12
3.1 Outline Drawings ............................................................................................................................... 12
3.2 Description of the input and output pins ......................................................................................... 16
3.3 Description of dummy pins............................................................................................................... 19
4.
5.
Internal Circuit and Features .............................................................. 20
Absolute Maximum Ratings ................................................................ 22
5.1 Electrical Maximum Ratings ............................................................................................................. 22
6.
Interface Circuit .................................................................................... 24
6.1 Input/Output Signal Connection ....................................................................................................... 24
6.2 General Interface Circuit Example.................................................................................................... 26
6.3 Recommended Wiring of Shunt Resistor and Snubber Capacitor ................................................ 28
7.
Function and Protection Circuit ......................................................... 29
7.1 SPM Functions versus Control Power Supply Voltage................................................................... 29
7.2 Under-Voltage Protection .................................................................................................................. 30
7.3 Short-Circuit Protection .................................................................................................................... 32
? 2008
FAIRCHILD SEMICONDUCTOR - Smart Power Module
2
相关PDF资料
FSBB15CH60F MODULE SPM 600V SPM27-CA
FSBB20CH60CL SMART POWER MODULE 20A SPM27-CB
FSBB20CH60CT MODULE ADV MOTION SPM SPM27-CC
FSBB20CH60C MODULE MOTION-SPM 600V SPM27-CC
FSBB20CH60SL MODULE SPM 600V 20A SPM27-CA
FSBB30CH60F IC SMART PWR MODULE SPM27-EA
FSBF10CH60BTL MODULE SPM 600V 10A 3PH SPM27-JB
FSBF10CH60BT MODULE SPM 600V 10A 3PH SPM27-JA
相关代理商/技术参数
FSBB15CH60C 制造商:Fairchild Semiconductor Corporation 功能描述:Transistor
FSBB15CH60F 功能描述:IGBT 晶体管 600V SPM RoHS:否 制造商:Fairchild Semiconductor 配置: 集电极—发射极最大电压 VCEO:650 V 集电极—射极饱和电压:2.3 V 栅极/发射极最大电压:20 V 在25 C的连续集电极电流:150 A 栅极—射极漏泄电流:400 nA 功率耗散:187 W 最大工作温度: 封装 / 箱体:TO-247 封装:Tube
FSBB20CH60 功能描述:IGBT 模块 HIGH_POWER RoHS:否 制造商:Infineon Technologies 产品:IGBT Silicon Modules 配置:Dual 集电极—发射极最大电压 VCEO:600 V 集电极—射极饱和电压:1.95 V 在25 C的连续集电极电流:230 A 栅极—射极漏泄电流:400 nA 功率耗散:445 W 最大工作温度:+ 125 C 封装 / 箱体:34MM 封装:
FSBB20CH60B 功能描述:IGBT 模块 600V -20A 3-phase RoHS:否 制造商:Infineon Technologies 产品:IGBT Silicon Modules 配置:Dual 集电极—发射极最大电压 VCEO:600 V 集电极—射极饱和电压:1.95 V 在25 C的连续集电极电流:230 A 栅极—射极漏泄电流:400 nA 功率耗散:445 W 最大工作温度:+ 125 C 封装 / 箱体:34MM 封装:
FSBB20CH60BT 功能描述:IGBT 模块 600V -20A 3-phase RoHS:否 制造商:Infineon Technologies 产品:IGBT Silicon Modules 配置:Dual 集电极—发射极最大电压 VCEO:600 V 集电极—射极饱和电压:1.95 V 在25 C的连续集电极电流:230 A 栅极—射极漏泄电流:400 nA 功率耗散:445 W 最大工作温度:+ 125 C 封装 / 箱体:34MM 封装:
FSBB20CH60C 功能描述:IGBT 模块 600V 20A SPM RoHS:否 制造商:Infineon Technologies 产品:IGBT Silicon Modules 配置:Dual 集电极—发射极最大电压 VCEO:600 V 集电极—射极饱和电压:1.95 V 在25 C的连续集电极电流:230 A 栅极—射极漏泄电流:400 nA 功率耗散:445 W 最大工作温度:+ 125 C 封装 / 箱体:34MM 封装:
FSBB20CH60CL 功能描述:IGBT 模块 20A, Motion-SPM RoHS:否 制造商:Infineon Technologies 产品:IGBT Silicon Modules 配置:Dual 集电极—发射极最大电压 VCEO:600 V 集电极—射极饱和电压:1.95 V 在25 C的连续集电极电流:230 A 栅极—射极漏泄电流:400 nA 功率耗散:445 W 最大工作温度:+ 125 C 封装 / 箱体:34MM 封装:
FSBB20CH60CT 功能描述:IGBT 模块 600V 20A SPM RoHS:否 制造商:Infineon Technologies 产品:IGBT Silicon Modules 配置:Dual 集电极—发射极最大电压 VCEO:600 V 集电极—射极饱和电压:1.95 V 在25 C的连续集电极电流:230 A 栅极—射极漏泄电流:400 nA 功率耗散:445 W 最大工作温度:+ 125 C 封装 / 箱体:34MM 封装: